| PART |
Description |
Maker |
| NR8360JP-BC |
InGaAs APD for OTDR applications. With FC-UPC connector.
30 um InGaAs APD IN DIP PACKAGE FOR OTDR APPLICATION
|
NEC
CEL[California Eastern Labs]
|
| C5460 C5460-01 |
APD module
|
HAMAMATSU[Hamamatsu Corporation]
|
| FU-318SAP- FU-318SAP-M6 FU-318AP-M6 |
InGaAs APD MODULE FOR LONG WAVELENGTH BAND 铟镓砷APD的模块长波段
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SD394-70-72-661 |
Cooled Large Area 10mm Red Silicon APD Module
|
Advanced Photonix, Inc.
|
| FU-319SPA-CV6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE 铟镓砷APD的前置放大器模块，用.31微米.55微米波长范围
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| S8550 |
Si APD array
|
Hamamatsu Corporation
|
| SSO-ADH-230-TO8P |
APD with Peltier-cooler
|
Roithner LaserTechnik GmbH
|
| FRM5W232HY |
InGaAs-APD/Preamp Receiver
|
Eudyna Devices Inc
|
| AD500-12SMD |
APD with 0.2 mm2 active area
|
Sensortechnics GmbH
|
| FRM5N141GT |
InGaAs-APD/Preamp Receiver
|
Eudyna Devices Inc
|
| FRM5J141GT |
InGaAs-APD/Preamp Receiver
|
Eudyna Devices Inc
|
| FRM5N141GT |
InGaAs-APD/Preamp Receiver
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
